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UPD6P4BMC-5A4 - MS3112E22-32S

UPD6P4BMC-5A4_2980468.PDF Datasheet


 Full text search : MS3112E22-32S


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K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K4R271669B-NMCG6 K4R441869B-NMCG6 K4R441869B-NMCK7 256K x 16/18 bit x 32s banks Direct RDRAMTM
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
K4R761869A-GCT9 K4R761869A-F K4R761869A-FBCCN1 K4R 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
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SAMSUNG[Samsung semiconductor]
MR18R162468MN1 (16Mx16)*4(6/8)pcs RIMMModule based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect
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6450130-5 MULTI-BEAM XL and MULTI-BEAM XLE - Power Distribution Connector System; MBXL R/A HDR 9P 32S 4P ( AMP )
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K6X4008T1F K6X4008T1F-B K6X4008T1F-F K6X4008T1F-GB Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum; Series:165; Number of Contacts:12; Connecting Termination:Solder; Circular Shell Style:Cable Plug; Circular Contact Gender:Socket; Current Rating:7.5A 512Kx8位低功耗和低电压的CMOS静态RAM
PT05SE18-32S 512Kx8位低功耗和低电压的CMOS静态RAM
512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM
D38999/26WA98SN
Samsung Semiconductor Co., Ltd.
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Samsung Electronic
 
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